- Over 300 equations, analysis routines, and reference tables,
as well as a constants library are contained on a 128k card.
- Easy entry of values for variables (with units) using the
menu keys provided; easy solving and converting of units.
- Equations cover a wide range of topics in solid state
- Menu can be displayed in large or small font.
- Analytical tools to compute yields from a wafer based on
Murphy’s defect density model.
The user interface browser presents three broad categories:
an equation library in 11 topics, three key analytical functions of common interest in IC
manufacturing, and reference data of interest to engineers working in solid state
Equation sets in a given sub-topic can be solved as a
whole, or as a selected set of equations. The variables in the equation set have
descriptions in addition to names, and often an equation set will have a picture
associated with it. The equations selected for each sub-category demonstrate a strong
balance between the learning foundations of solid state electronics and practical devices.
For equations in a sub-topic, you can solve either a single
equation or a set of equations. The built-in multiple equation solver reviews each
equation selected and solves them in a systematic manner until all unknowns are resolved.
The full plotting abilities of the HP 48 are made available to analyze the problem
Physics I - Carrier density in semiconductors, Fermi
level, carrier mobility, thermal properties, and hot electrons.
Physics II - Hall effect, magneto resistance,
thermo-electric effect, thermo-magnetic effect, Franz-Keldysh effect, and cyclotron
PN Junctions I - PN Junction properties, step junction
capacitance, linear junction capacitance, junction currents, high injection current,
recombination current, and junction breakdown.
PN Junctions II - AC Circuit model, switching diode,
short diode, long diode, p-I-n diode, and hetero-junction diode
MOS Electronics - MOS capacitor, surface properties,
and CCD electronics
MOS Devices - Device parameters, MOS transistor,
subthreshold current, velocity saturation effects, small geometry effects, and temperature
MOS Inverter Design - Circuit set up, saturated load,
non-saturated load, depletion load, resistor load, and CMOS inverter.
Junction Transistor I - Ideal BJT, base recombination,
Ebers-Moll model, early effect, and punch-through/avalanche.
Junction Transistor II - Charge control model, turn-on
transient, turn-off transient, and AC model.
Microwave Devices - IMPATT diode, tunnel diode, Gunn
diode, BARITT diode.
IC Technology - Crystal growth, epitaxial deposition,
oxidation, etching, photolithography, dry etching, and metallization.
Band gap- calculates SI, Ge and GaAs as functions of
Gross die- calculates the number of complete die on a
Murphy’s yield- computes the percentage of good
chips on a wafer based on area and defect density.
SI properties GaAs properties
III-V and II-VI compounds SI Donor levels
SI Acceptor levels SiO2/Si3N4 colors
17 constants of interest in solid state electronics such as
Dirac’s constant, Avogadro’s number, permittivity and permeability of free
space, and Boltzmann’s constant, among others.